论文部分内容阅读
以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在石英片上沉积了Ir/C簇膜。研究了氧气流量及沉积温度对Ir/C簇膜成分和结构的影响。研究发现,少量氧气的加入(4mL/min)大幅度地降低了Ir/C簇膜中碳元素的含量;沉积温度对薄膜中碳含量的影响规律则比较复杂:未通氧气的情况下,在实验温度范围内碳含量随着温度的升高而增大,而在通入氧气的情况下碳含量呈现出先升后降的复杂变化趋势。大量碳的沉积宽化了Ir的衍射峰,使其具有非晶衍射的特征。当沉积温度为650℃,未通氧气沉积的Ir/C簇膜中铱晶粒粒经约为3nm。
The Ir / C cluster films were deposited on quartz wafers by using the metal organic compound chemical vapor deposition (MOCVD) technique with iridium acetylacetonate as precursor. The effects of oxygen flow rate and deposition temperature on the composition and structure of Ir / C cluster were investigated. It was found that the addition of a small amount of oxygen (4 mL / min) significantly reduced the carbon content in the Ir / C cluster film. The effect of deposition temperature on the carbon content in the film was rather complicated: in the absence of oxygen, In the experimental temperature range, the carbon content increases with the increase of temperature, while the carbon content increases with the introduction of oxygen and then presents the complex trend of increasing firstly and then decreasing. The deposition of a large amount of carbon broadens the diffraction peak of Ir, giving it the characteristic of amorphous diffraction. When the deposition temperature was 650 ° C, the iridium crystal grains in the un-oxygenated Ir / C cluster film were about 3 nm in size.