日本富士通公司已生产出一种光开关用的材料,这种材料100％的恢复时间(或看切换速度)为9ps。该公司认为:采用这种材料可以制造出能以100Gb/s速率处理数据的切换器件。富士通公司为制造这种材料,使用分子束外延法产生量子阱,该量子阱由80层镓砷化物和铝镓砷化物交替而成,每层厚度中只有几个原子。然后采用聚焦活性离子束蚀刻技术把该量子阱加工成100nm的宽度。富士通公司用这种材料已生产出了一种光开关,其尺寸大约为目前采用Y形光波导器件的1/4,这种光 Japan’s Fujitsu Limited has produced a material for optical switches that provides 100% recovery time (or see switching speed) of 9ps. The company believes that the use of this material can be made to handle data at 100Gb / s switching device. To make this material, Fujitsu uses molecular beam epitaxy to create a quantum well that is composed of 80 layers of gallium arsenide and aluminum gallium arsenide alternating with only a few atoms in each layer. The quantum well is then processed to a width of 100 nm using focused reactive ion beam etching. Fujitsu has used this material to produce an optical switch that measures approximately 1/4 the size of currently used Y-shaped optical waveguide devices. This light