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We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50％ cutoff wavelength up to 2.63μm at room temperature.The moderate growth temperature is applied to balance the Bi incorporation and material quality.Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7％ and 76％,respectively.The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K.The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.