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提出非均匀指间距结构功率SiGe HBTs的版图设计用以改善热稳定性。模拟和实验结果均表明,与传统的均匀指间距结构相比,非均匀指间距结构HBT的峰值结温和温度分布非均匀性均得到显著改善。上述改善归功于非均匀指间距结构HBT中心指间距的增加,从而有效阻止热流由外侧指流向中心指处。此外,与均匀指间距结构器件相比,其热阻改善13.71%,热退化功率水平提高22.8%。因此,模拟和实验均证明采用非均匀指间距结构HBT的版图设计可有效改善功率HBTs热稳定性。
The layout design of non-uniform interdigital structure power SiGe HBTs is proposed to improve the thermal stability. Both simulation and experimental results show that the peak junction temperature and nonuniformity of temperature distribution of HBT with non-uniform interdigital structure are significantly improved compared with the conventional uniform interdigital structure. The above improvements are attributed to the increase of the center finger spacing of the HBT center of the non-uniform interdigital structure, thereby effectively preventing the heat flow from the outside finger to the central finger. In addition, the thermal resistance is improved by 13.71% and the thermal degradation power level is increased by 22.8% compared with the device with uniform finger spacing. Therefore, both simulation and experiment prove that the layout design of HBT with non-uniform interdigital structure can effectively improve the thermal stability of power HBTs.