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用改进的布里奇曼法生长出Φ１８×３０ｍｍＡｇＧａＳｅ＿２单晶体，并通过在共晶温度点以下迅速冷却的淬火热处理或在Ａｇ＿２Ｓｅ及ＡｇＧａＳｅ＿２粉末围裹下的退火热处理，显著改善了ＡｇＧａＳｅ＿２晶体的透明度。其中尤以在ＡｇＧａＳｅ＿２多晶粉末围裹下的退火效果为佳。红外显微观察及红外透过曲线测量表明：晶体中引起红外吸收的微观散射中心呈层状分布，致使晶体的红外透过率与方向有关。
The growth of Φ18 × 30mmAgGaSe_2 single crystal by the improved Bridgman method and the significant improvement of the transparency of the AgGaSe_2 crystal by the quenching heat treatment under the eutectic temperature and the annealing heat treatment under the Ag_2Se and AgGaSe_2 powders. Among them, the annealing effect of AgGaSe_2 polycrystalline powder is better. Infrared microscopic observation and infrared transmission curve measurement show that the microscopic scattering center of the crystal that causes infrared absorption is in a layer-like distribution, and the infrared transmittance of the crystal is related to the direction.