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经过几十年的发展,集成电路的特征尺寸将在10—15年内达到其物理极限,替代材料的研究迫在眉睫.石墨烯曾被寄予厚望,但由于其缺乏带隙限制了在数字电路领域的应用.近年来,单层及多层辉钼材料由于具有优异的半导体性能,有可能超过石墨烯成为硅的替代者而引起了微纳电子领域的广泛关注.本文对近二年国际上辉钼半导体器件研制、辉钼半导体材料的性能表征及制备方法研究等方面的进展进行了综述,并对大面积单层材料的研制提出了值得关注的方向.
After decades of development, the feature size of integrated circuits will reach its physical limit within 10-15 years, and research on alternative materials is imminent. Graphene has been expected to have great promise but its limited application in digital circuits due to its lack of bandgap In recent years, single-layer and multi-layer molybdenum materials have attracted much attention in the field of micro / nanoelectronics because of their excellent semiconducting properties, which may surpass that of graphene as a substitute for silicon.In this paper, Device development, performance characterization of molybdenum-molybdenum semiconductor materials and research on preparation methods are summarized. And the development direction of large-area single-layer materials is worthy of attention.