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高压P-LDMOS的失效实验分析表明其沟道区的高峰值电场会导致沟道区的热载流子效应,从而将降低高压P-LDMOS的可靠性.借助半导体器件专业软件Tsuprem-4和Medici的模拟给出了高压P-LDMOS沟道区的电场分布情况,模拟结果显示在沟道区存在2个峰值电场,讨论了产生这2个峰值电场的原因,同时给出了降低这2种峰值电场的有效方法———适当增加沟道的长度和降低沟道区的浓度.实验结果表明采用这2种方法优化得到的高压P-LDMOS的栅击穿电压得到了很大的提高,同时P-LDMOS的可靠性也得以大幅提高.
The failure analysis of high-voltage P-LDMOS shows that the high peak electric field in the channel region leads to the hot carrier effect in the channel region, which will reduce the reliability of the high-voltage P-LDMOS. With the help of the semiconductor device specialty software Tsuprem-4 and Medici The simulation results show that there are two peak electric fields in the channel region and the reasons for the two peak electric fields are discussed. The two peak densities are also given The effective method of the electric field --- increasing the length of the channel and reducing the concentration of the channel region properly.The experimental results show that the gate breakdown voltage of the high voltage P-LDMOS optimized by these two methods has been greatly improved, and P The reliability of -LDMOS has also been greatly improved.