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利用蒙特卡罗(Monte Carlo)方法模拟了Cu薄膜在四方基底上的三维生长过程。模型中考虑了三个主要的原子热运动过程:原子沉积、原子扩散、原子脱附,各过程发生的概率是由各运动的速率来决定的。讨论了基底温度、沉积速率及原子覆盖度对Cu薄膜的表面形貌及表面粗糙度的影响。模拟结果表明:随基底温度升高或沉积速率下降,岛的平均尺寸增大,数目减少,薄膜以层状生长方式生长;Cu薄膜表面粗糙度随温度的升高而减小,当基底温度处于某一临界温度之内时,表面粗糙度随沉积速率的变化很大,但当基底温度超过临界温度时,表面粗糙度随沉积速率的变化很小;薄膜的粗糙度与薄膜亚单层的形核密切相关。
Monte Carlo method was used to simulate the three-dimensional growth of Cu thin films on a tetragonal substrate. The model considers three major thermal processes of atomic heat: atomic deposition, atomic diffusion, atomic desorption, and the probability of occurrence of each process is determined by the rate of each movement. The effects of substrate temperature, deposition rate and atomic coverage on the surface morphology and surface roughness of Cu films were discussed. The simulation results show that the average size of the island increases with the decrease of the substrate temperature or the deposition rate, and the number of the islands increases. The film grows in a layered manner. The surface roughness of the Cu thin film decreases with the increase of the temperature. The surface roughness changes greatly with the deposition rate when the temperature is within a certain critical temperature, but the surface roughness changes little with the deposition rate when the substrate temperature exceeds the critical temperature. The roughness of the film is similar to that of the film sub-monolayer Nuclear closely related.