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The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters.The dependences of the sputtering yield on the incident ion energy,the incident angle and the number of Gallium(Ga) and Arsenic(As) ions are predicted.The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82o and 84o.
The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium (Ga) and Arsenic (As) ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82o and 84o.