Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator(PDSOI)NMOSFETs with the bodies floating were st
To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode(APD) by using a high/low-Al-
A scheme is proposed for tunable all-optical switching based on the double-dark states in a five-level atom-cavity system. In the scheme, the output signal ligh