论文部分内容阅读
在Si(100)衬底上,用直流磁控溅射沉积约100nm的纯金属Fe膜,然后在600~1000℃真空退火2h.用能量为3MeV的C离子进行了卢瑟福背散射(RBS)测量,并用SIMNRA6.0程序分析了测量结果,给出了界面附近Fe原子与Si原子间互扩散的完整图像.扫描电镜(SEM)观察和X射线衍射(XRD)测量表征了不同温度退火2h后Fe/Si系统表面的显微结构和晶体结构.由RBS、XRD测量与SEM观察结果,分析了退火过程对磁控溅射制备的Fe/Si双层膜结构原子间的互扩散行为、硅化物形成及显微结构的影响.
On a Si (100) substrate, a pure Fe film with a thickness of about 100 nm was deposited by DC magnetron sputtering and then annealed in vacuum at 600-1000 ° C. for 2 h. Rutherford backscattering (RBS) was performed using C ions with an energy of 3 MeV ), And the measurement results were analyzed by SIMNRA6.0 program, and a complete image of interdiffusion between Fe atoms and Si atoms in the vicinity of the interface was given.The SEM images and X-ray diffraction (XRD) measurements showed that annealing at different temperatures for 2h The microstructure and crystal structure of the Fe / Si system were studied by RBS, XRD and SEM. The interdiffusion behavior of the Fe / Si bilayer membrane prepared by magnetron sputtering during the annealing process was analyzed. Material formation and microstructure effects.