ZnO_(1-x)Te_x and ZnO_(1-x)S_x semiconductor alloys as competent materials for opto-electronic and s

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ZnO_(1-x)Te_x ternary alloys have great potential to work as a photovoltaic(PV) absorber in solar cells.ZnO_(1-x)S_x is also a ZnO based alloy that have uses in solar cells.In this paper we report the comparative study of various parameters of ZnO_(1-x)Te_x and ZnO_(1-x)S_x for selecting it to be a competent material for solar cell applications.The parameters are mainly being calculated using the well-known VCA(virtual crystal approximation) and VBAC(Valence Band Anti-Crossing) model.It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material.The spin-orbit splitting energy value of ZnO_(1-x)Te_x was found to be higher than that of ZnO_(1-x)S_x.Beside this,the strain effects are also higher in ZnO_(1-x)Te_x than ZnO_(1-x)S_x.The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO_(1-x)Te_x,the spin-orbit splitting energy value rises above the band gap value,which signifies a very less internal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell.Moreover,it also covers a wide wavelength range compared to ZnO_(1-x)S_x. ZnO_ (1-x) Te_x ternary alloys have great potential to work as a photovoltaic (PV) absorber in solar cells. ZnO_ (1-x) S_x is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO_ (1-x) Te_x and ZnO_ (1-x) S_x for selecting it to be a competent material for solar cell applications. The parameters are mainly being calculated using the well-known VCA (virtual crystal approximation) and VBAC (Valence Band Anti-Crossing) model. It has been analyzed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnO - (1 -x) Te_x was found to be higher than that of ZnO_ (1-x) S_x.Beside this, the strain effects are also higher in ZnO_ (1-x) Te_x than ZnO_ (1-x) S_x.The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO - (1-x) Te_x, the spin-orbit splitting energy value rises above the band gap value , which signifies a very less internal carrier recombination that reduces the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO_ (1-x) S_x.
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