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采用软件理论分析的方法分析了InGaN/GaN量子阱数量变化对双波长发光二极管发光光谱、内量子效率、电子空穴浓度分布、溢出电流等产生的影响.分析结果表明,量子阱数量的增加会引起载流子分配不均的现象,所以量子阱数量的增加并不能有效地提升载流子复合率、内量子效率和发光强度,还会引起开启电压升高的现象,影响能量转化效率.此外,不同发光波长的量子阱数量的增加会引起发光光谱强度的变化.
The influence of the variation of InGaN / GaN quantum wells on the luminescence spectra, internal quantum efficiency, electron-hole concentration distribution, overflow current and so on of the dual-wavelength LED has been analyzed by software theory analysis.The results show that the increase of the number of quantum wells Causing the uneven distribution of carriers, so the increase of the number of quantum wells can not effectively improve the carrier recombination rate, internal quantum efficiency and luminous intensity, but also cause the phenomenon that the turn-on voltage is increased and affect the energy conversion efficiency. The increase of the number of quantum wells with different luminescence wavelengths will cause the change of the intensity of the luminescence spectrum.