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使用稀土铒作为吸杂剂可以有效地减少背景载流子浓度达一个数量级以上，和传统工艺条件相比生长溶液的烘烤时间从60～70小时减至3～4小时，同时获得了高纯度的铟镓砷外延层和高质量的异质结．用于光晶体管使其光增益高达4000，和未使用铒吸杂剂相比增加近3倍．
The use of rare earth erbium as a gettering agent can effectively reduce the background carrier concentration by more than an order of magnitude, compared with the traditional process conditions, the baking time of the growth solution is reduced from 60 to 70 hours to 3 to 4 hours, and high purity Indium gallium arsenide epitaxial layer and high-quality heterojunction. For phototransistors, their optical gain is up to 4000, which is almost 3 times higher than that without using erbium getter.