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采用分层吸收渐变电荷倍增(SAGCM)结构,通过两次扩散、多层介质淀积、AuZn p 型欧姆接触、AuGeNi n 型欧姆接触等工艺,设计制造了正面入射平面 InP/InGaAs 雪崩光电二极管,器件利用 InGaAs做吸收层,InP 做增益层,光敏面直径50μm;测试结果表明器件有正常的光响应特性,击穿电压32～42 V,在低于击穿电压2 V 左右可以得到大约10 A/W 的光响应度,在0到小于击穿电压1 V 的偏压范围内,暗电流只有1 nA 左右;器件在2.7 GHz 以下有平坦的增益。
The front-entry plane InP / InGaAs avalanche photodiode is designed and manufactured by using two-step diffusion, multi-layer dielectric deposition, AuZn p-type ohmic contact and AuGeNi n type ohmic contact using a layered absorption gradient charge multiplication (SAGCM) The device uses InGaAs as the absorber layer and InP as the gain layer. The photosensitive surface has a diameter of 50 μm. The test results show that the device has the normal photoresponse characteristics. The breakdown voltage is 32-42 V, and about 10 A below the breakdown voltage of 2 V / W, the dark current is only about 1 nA from 0 to less than the breakdown voltage of 1 V; the device has a flat gain below 2.7 GHz.