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为满足SoC系统负载快速变化的要求,提出了一种新型摆率增强型片上LDO系统。通过增加有效的内部检测电路,使LDO的功率管栅极电压可以快速地响应输出负载跳变,提高电路响应速度。采用中芯国际40nm CMOS工艺模型,对电路进行仿真。仿真结果表明,当LDO的负载电流以100mA/μs跳变时,电路的最大上冲电压为110mV,下冲电压为230mV,恢复时间分别为1.45μs和1.6μs。同时,在2V电源电压下,电路的静态电流只有42μA。
In order to meet the requirement of SoC system load rapid change, a new slew rate enhanced on-chip LDO system is proposed. By adding an effective internal detection circuit, the LDO power tube gate voltage can quickly respond to the output load jump, improve the circuit response speed. Using SMIC 40nm CMOS process model, the circuit simulation. The simulation results show that the maximum overshoot voltage of the circuit is 110mV and the undershoot voltage is 230mV when the load current of LDO jumps at 100mA / μs, and the recovery time is 1.45μs and 1.6μs respectively. At the same time, the quiescent current of the circuit is only 42μA at 2V supply voltage.