论文部分内容阅读
采用机械球磨法,以石墨为反应前驱物,在充有300kPa压力的氨气气氛下连续球磨200h,然后在氨气气氛、700℃以上的温度条件下热处理5h,制备出C3N4纳米棒。利用X射线粉末衍射(XRD)、透射电镜(TEM)、电子衍射、能量损失谱(EELS)以及红外光谱(FTIR)等手段进行了表征。纳米棒的长度在1～2μm,直径为80～150nm。分析结果表明合成的产物以β-C3N4单晶为主。对合成的β-C3N4产物进行光致发光(PL)性能测试和计算,得出其发射蜂在3.5～4.4eV之间,属于宽带隙的半导体材料。并对纳米棒的形成机理进行了初步探讨。
The mechanical milling method was used to make graphite as reaction precursor. The mixture was ball milled continuously for 200 hours in an atmosphere of ammonia with a pressure of 300 kPa and then heat-treated in an ammonia atmosphere at 700 ℃ for 5 h to prepare C3N4 nanorods. XRD, TEM, EDS, EELS and FTIR were used for characterization. The nanorods have a length of 1-2 μm and a diameter of 80-150 nm. The results show that the synthesized product is dominated by β-C3N4 single crystal. The photoluminescence (PL) performance of the synthesized β-C3N4 product was tested and calculated. The result shows that the emitted bee is between 3.5 and 4.4 eV and belongs to the wide bandgap semiconductor material. The formation mechanism of nanorods was also discussed.