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利用Si分子束外延技术,及硅平面器件工艺,制作了工作温度大于液氮温度的SiGe/Si异质结内光电子发射红外探测器。探测器的黑体探测率在77K时达到1.2×10~(10)cm·Hz~(1/2)/W。文中对SiGe/Si异质结的电流电压特性,反向饱和电流与温度的关系,探测器的光谱响应等都作了较为详细的讨论。
SiGe / Si heterojunction photoelectron emission infrared detector with operating temperature greater than liquid nitrogen temperature was fabricated by Si molecular beam epitaxy and silicon planar device technology. The blackbody detection rate of the detector reaches 1.2 × 10 ~ (10) cm · Hz ~ (1/2) / W at 77K. In this paper, the current and voltage characteristics of SiGe / Si heterojunction, the relationship between the reverse saturation current and temperature, the spectral response of the detector are discussed in more detail.