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用溶胶—凝胶法在 Pt/ Ti/ Si O2 / Si(1 0 0 )基底上制备 Pb1-x L ax Ti O3 (PLT,x<0 .2 )薄膜 ,研究薄膜的结构及其介电、铁电性能。在 60 0℃下退火 1小时的 PL T薄膜表现出单一的钙钛矿结构 ,(1 0 0 )择优取向明显。在室温下 PLT薄膜有典型的电滞回线。在 x<0 .2 (摩尔比 )的范围内 ,PLT薄膜相对介电常数则随着 La的增加而增加。
The Pb1-xLaxTiO3 (PLT, x <0.2) thin films were prepared by sol-gel method on a Pt / Ti / Si O2 / Si (100) substrate. Ferroelectric properties. The PLT film annealed at 60 ℃ for 1 hour showed a single perovskite structure with a good preferential orientation of (100). PLT films have typical hysteresis loops at room temperature. In the range of x <0.2 (molar ratio), the relative permittivity of PLT film increases with the increase of La.