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用正电子湮没技术(PAT)研究了原料富Cd改进布里奇曼法生长的碲锌镉单晶样品退火前后的缺陷。刚生长的样品缺陷寿命值较高,其内部存在的点缺陷主要是占优势的Cd空位,用富Cd同成份源Cd1-xZnxTe气氛对样品在不同温度下等时退火后,发现样品的正电子寿命参数对退火温度表现出很强的依赖关系,通过对样品退火过程中空位的迁移、聚集及消失情况分析,得出较适宜的退火温度约为700℃。
Positron annihilation technique (PAT) was used to study the defects before and after annealing of CdTe single crystal grown by the Cd-modified Bridgman method. The defect value of newly grown samples was higher, and the point defects existing in them were predominantly Cd vacancies. After the samples were annealed at different temperatures in Cd1-xZnxTe atmosphere with Cd-rich Cd source, the positron of the sample The lifetime parameters show a strong dependence on the annealing temperature. Through the analysis of the migration, aggregation and disappearance of vacancies in the sample annealing process, the suitable annealing temperature is about 700 ℃.