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采用蓝色荧光材料1p-TDPVBi结合绿色磷光材料2Ir(ppy)3掺杂到母体材料CBP作为绿光发光层,并且采用3BPhen作为电子传输层和激子阻挡层制备结构为ITO/m-MTDATA(50nm)/NPB(10nm)/p-TDPVBi(dnm)/CBP∶Ir(ppy)38%7nm/BPhen(60nm)/LiF(1nm)/Al的有机发光器件。实验结果表明:通过改变蓝光发光层p-TDPVBi的厚度,得到了高效率的有机发光器件,当p-TDPVBi厚度为5nm时,器件的电流效率和功率效率在4V时达到32.3cd/A和25.3lm/W,亮度在11V时达到31 020cd/m2。研究了p-TDPVBi厚度由3nm变化到9nm,OLED器件的电流密度-电压特性曲线、亮度-电压曲线及电流效率-电压和功率效率-电压等光电性能的变化。
The green fluorescent material 1p-TDPVBi and the green phosphorescent material 2Ir (ppy) 3 were doped into the host material CBP as a green light emitting layer, and 3BPhen as an electron transport layer and an exciton blocking layer were used to prepare ITO / m-MTDATA 50 nm) / NPB (10 nm) / p-TDPVBi (dnm) / CBP: Ir (ppy) 38% 7 nm / BPhen (60 nm) / LiF (1 nm) / Al. The experimental results show that by changing the thickness of the p-TDPVBi layer, a high efficiency organic light-emitting device is obtained. When the thickness of p-TDPVBi is 5nm, the current efficiency and power efficiency of the device reach 32.3cd / A and 25.3 lm / W, the brightness reaches 31 020cd / m2 at 11V. The change of p-TDPVBi thickness from 3 nm to 9 nm was investigated. The current density-voltage characteristic curve, brightness-voltage curve, current efficiency, voltage and power efficiency-voltage of OLED devices were investigated.