日本 HOYA 先进半导体技术公司采用 CVD 法成功地开发了6英寸级立方晶(3C)的 SiC 衬底。作为下一代的半导体衬底,SiC 材料越来越受到人们的关注。其优点是禁带宽、功率损耗低,饱和电子速度和热传导率要远远优于 Si 材料。尤其适用于功率器件和高速逻辑器件的应用。尽管 SiC 材料存 Japan HOYA advanced semiconductor technology companies successfully developed by CVD 6-inch cubic (3C) SiC substrate. As the next generation of semiconductor substrates, SiC materials are attracting more and more attention. Its advantages are forbidden bandwidth, low power loss, far faster saturation electron velocity and thermal conductivity than Si materials. Especially suitable for power devices and high-speed logic device applications. Despite the existence of SiC material