硅材料的节能能力已接近极限,部分企业把注意力放到碳化硅材料上。SiC材料的采用也是功率半导体器件的主要技术趋势之一。以前功率半导体器件都采用硅材料,但业内人士认为硅材料的节能能力已经接近极限,因此部分企业开始把注意力放到碳化硅材料的开发上。对此,业界指出,碳化硅半导体功率器件有四大优点:第一,工作温度范围比较大,在高温下也可工作;第二, Energy-saving capacity of silicon materials is approaching the limit, some companies to focus on silicon carbide materials. The adoption of SiC materials is also one of the major technological trends in power semiconductor devices. Previous power semiconductor devices are made of silicon material, but the industry believes that the energy saving capacity of silicon material is approaching the limit, so some companies began to focus on the development of silicon carbide materials. In response, the industry pointed out that silicon carbide semiconductor power devices have four major advantages: First, the operating temperature range is relatively large, can work at high temperatures; Second,