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我们研制成功一种新型亚微米边缘结,这种边缘型超导隧道结以半导体材料硅作为上、下电极间的隔离层。通过半导体层的正常电导可用来消除隧道结的滞后,使之不必另外并联电阻就可用来制造 SQUID 器件。我们用这种亚微米边缘结制成了 DC—SQUID,用两种不同方法测量了它的磁通噪声,并把测量结果与理论计算作了比较。
We have successfully developed a new type of sub-micron edge junction, the edge of the superconducting tunnel junction semiconductor material silicon as the upper and lower electrodes between the isolation layer. The normal conductance through the semiconducting layer can be used to eliminate the hysteresis of the tunnel junction so that it can be used to fabricate a SQUID device without the need for additional parallel resistors. We made a DC-SQUID using this sub-micron edge junction, measured its flux noise in two different ways, and compared the results with theoretical calculations.