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为了得到高性能的 Ga N基发光器件 ,有源层采用 MOCVD技术和表面应力的不均匀性诱导方法生长了 In-Ga N量子点 ,并通过原子力显微镜 (AFM)、透射电子显微镜 (TEM)和光致发光 (PL )谱对其微观形貌和光学性质进行了观察和研究 .AFM和 TEM观察结果表明 :In Ga N/ Ga N为平均直径约 30 nm,高度约 2 5 nm的圆锥 ;In Ga N量子点主要集中在圆锥形的顶部 ,其密度达到 5 .6× 10 1 0 cm- 2 .室温下 ,In Ga N量子点材料 PL谱强度大大超出相同生长时间的 In Ga N薄膜材料 ,这说明 In Ga N量子点有望作为高性能有源层材料应用于 Ga N基发光器件 .
In order to obtain high-performance Ga N-based light-emitting devices, the active layer is grown by InOCoN quantum dots using MOCVD technique and surface stress inhomogeneity-induced method, and is characterized by atomic force microscopy (AFM), transmission electron microscopy The results of AFM and TEM show that In Ga N / Ga N is a cone with an average diameter of about 30 nm and a height of about 25 nm. In Ga N quantum dots are mainly concentrated on the top of the conical shape with a density of 5.6 × 10 10 cm -2. The PL spectra of In Ga N QDs at room temperature significantly exceed that of In Ga N thin film materials with the same growth time The In Ga N quantum dots are expected to be used as high-performance active layer materials for Ga N-based light-emitting devices.