众所周知,pH—ISFET(下简称ISFET)在直接电位法测量中具有许多优点,如分析速度快、成本低、可提供氢离子活度信息、在连续监测中使用非常方便等等。然而直接电位法测量对于器件的工作条件以及器件的基本参数的要求非常严格。环境温度、离子强度的变化。器件的时漂、温漂、滞后、灵敏度对于器件的测量结果都会有明显的影响,尤其在长期测量中,这一问题将变得更为严重。 As we all know, pH-ISFET (hereinafter referred to as ISFET) has many advantages in the direct potential measurement, such as fast analysis, low cost, can provide hydrogen ion activity information, continuous monitoring is very easy to use and so on. However, the direct potential method for measuring the working conditions of the device and the basic parameters of the device requirements are very strict. Environmental temperature, ionic strength changes. Device drift, temperature drift, hysteresis, sensitivity of the device measurements will have a significant impact, especially in the long-term measurement, the problem will become more serious.