采用化学气相沉积(CVD)方法在有金催化层的硅片上制备了SnO2纳米线。用扫描电子显微镜(SEM)及X射线衍射仪(XRD)对其形貌及结构进行了表征,分析了蒸发温度及氧气流量对SnO2相貌的影响。对比了SnO2纳米线在室温及150℃条件下的氢气敏感特性,结果表明SnO2纳米线在150℃下对氢气的灵敏度高达13.3,响应及回复时间≤5 s,表现出了良好的氢敏性能。 SnO2 nanowires were fabricated on a gold-catalyzed silicon wafer by chemical vapor deposition (CVD). The morphology and structure were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), and the influence of evaporation temperature and oxygen flow on the appearance of SnO2 was analyzed. The sensitivity of SnO2 nanowires to hydrogen at room temperature and 150 ℃ was compared. The results show that the sensitivity of SnO2 nanowires to hydrogen at 150 ℃ is as high as 13.3, and the response and recovery time are less than or equal to 5s, indicating good hydrogen sensitivity.