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采用成本低廉的连续离子层沉积法通过在n型Si衬底上沉积γ相的多晶结构的CuI薄膜而制备了CuI/n-Si异质结。并通过测试其光照下的I-V、C-V特性对其光电特性、载流子输运特性及导电机理进行了研究。研究表明CuI/n-Si异质结存在良好的整流特性,由于在CuI/nSi异质结界面处的导带补偿与价带补偿相差较大,在正向电压、无光照下,导电机理为空间电荷限制电流导电,此时空穴电流主导;在光照下,异质结表现出良好的光电响应,因此可以广泛应用在光电探测和太阳电池等领域。
The CuI / n-Si heterojunction was prepared by a continuous deposition method with low cost by depositing a polycrystalline CuI film of γ-phase on an n-type Si substrate. The photoelectric properties, carrier transport properties and conduction mechanism were studied by testing their I-V and C-V characteristics under light irradiation. The results show that the CuI / n-Si heterojunction has good rectification characteristics. Because of the large difference between the conduction band compensation and the valence band compensation at the CuI / nSi heterojunction interface, the conduction mechanism is The space charge restricts the current conduction, and the hole current dominates at this time. The heterojunction exhibits good photoelectric response under light irradiation, and thus can be widely used in the fields of photodetection and solar cells.