一、高集成化发展的必然趋势二十几年来半导体集成电路技术有飞跃的发展。以硅动态随机存取存贮器(DRAM)为例,1972年开发成功1K产品,到1985年就已有1M位产品问世,其集成度大约是每三年翻两番。这种集成度的提高,主要是依靠改进器件和电路设计、增大芯片面积以及缩小图形尺寸而得以实现的。但就目前的电路设计来说,一晶体管型存贮单元DRAM的开发已接近简化的极限。因此今后将主要是依靠增大芯片面积和缩小图形尺寸。 First, the inevitable trend of highly integrated development In the past two decades, semiconductor integrated circuit technology has been leaping in development. Take silicon dynamic random access memory (DRAM) as an example, 1K products were successfully developed in 1972 and 1 Million products were available by 1985, with an integration level of about quadrupling every three years. This increase in integration, mainly by improving device and circuit design, increasing the chip area and reduce the size of the graphics can be achieved. However, for the current circuit design, the development of a transistor type memory cell DRAM is approaching the limit of simplification. Therefore, the future will mainly depend on increasing the chip area and reducing the size of graphics.