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本文采用分子动力学方法模拟了不同入射角度对F离子与SiC表面相互作用的影响,模拟选择的入射能量为10 eV,入射角度分别为15?、30?、45?、60?和75?。模拟结果显示,F离子的沉积率随入射角度的增加而减小。当入射角度为45°时,Si原子和C原子的刻蚀率最大,且Si原子的刻蚀率大于C原子。在相互作用过程中,SiC表面形成一层Si-C-F反应层,反应层厚度随入射角度增加而减小,并且其主要成分是SiF和CF。
In this paper, the influence of different incident angles on the interaction between F ions and SiC surface has been simulated by molecular dynamics method. The energy of the incident light is 10 eV and the incident angles are 15, 30, 45, 60 and 75, respectively. The simulation results show that the deposition rate of F ions decreases with the incident angle. When the incident angle is 45 °, the etching rate of Si atoms and C atoms is the largest, and the etching rate of Si atoms is larger than that of C atoms. During the interaction process, a Si-C-F reaction layer was formed on the SiC surface. The thickness of the reaction layer decreased with increasing incident angle, and its main components were SiF and CF.