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用ＲＦＰｌａｓｍａ ＭＢＥ方法生长出了ＧａＮ 材料，它的Ｘ 射线衍射半峰宽为３３５ 秒，７７Ｋ 下ＰＬ发光峰半峰宽为２２ｍｅＶ，表明了材料具有较高的晶体质量。根据Ｘ射线衍射分析，位错密度约为７ ．３ ×１０８ｃｍ －２ 。用Ｓｉ 作为掺杂剂，所得载流子浓度可覆盖１０１７ － １０１９ｃｍ －３ 的范围。掺Ｓｉ ＧａＮ 的ＰＬ谱表明，Ｓｉ 的引入可提高材料的发光效率。
The GaN material was grown by the RFPlasma MBE method. The FWHM of the GaN material was 335 seconds. The half-width of the PL emission peak at 77K was 22 meV, indicating that the material has high crystal quality. According to X-ray diffraction analysis, the dislocation density is about 7. 3 × 108 cm -2. Using Si as a dopant, the resulting carrier concentration can cover the range of 1017 - 1019 cm "3. The PL spectrum of Si-doped GaN shows that the introduction of Si can improve the light-emitting efficiency of the material.