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中子辐照在半导体硅晶体中形成无序区,使其电学性能受到严重影响.本文根据无序区基本特征,系统分析中子辐照对少数载流子寿命影响的过程,给出了一个完整自洽的计算表达式;理论计算了材料掺杂浓度、无序区辐照缺陷分布态,以及载流子注入量等参量对少数载流子寿命的影响.最后,将计算结果与点缺陷模型、及实验测量数量进行比较和讨论.
Neutron irradiation in the formation of a disordered semiconductor silicon crystal, so that its electrical properties are severely affected.According to the basic characteristics of the disordered region, the system analysis of the impact of neutron irradiation on minority carrier lifetime process, given a Complete and self-consistent calculation expression, and the effects of material doping concentration, disordered distribution of disordered radiation and carrier injection on the lifetime of minority carriers were calculated theoretically.Finally, the calculation results were compared with the point defects Model, and the number of experimental measurements were compared and discussed.