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根据多晶硅薄膜氢化的微观机理 ,提出改进氢化效果的工艺方法。在不增加设备投资的情况下 ,采用该方法能够明显提高多晶硅薄膜的氢化效果 ,从而提高薄膜晶体管的性能 ,ION/ IOFF从1 0 3量级增加到 1 0 5量级 ,氢化工艺的处理时间也相应缩短。
According to the microscopic mechanism of hydrogenation of polycrystalline silicon film, a technological process for improving the hydrogenation effect is proposed. Without increasing equipment investment, the method can significantly improve the hydrogenation effect of the polysilicon film to improve the performance of the thin film transistor. The ION / IOFF increases from the order of 103 to the level of 105, and the processing time of the hydrogenation process Also shortened accordingly.