用X射线光电子能谱(XPS)研究了不同含氧气氛中烧结的薄膜CdSe及Cdse_xTe_(1-x)电极表面,以及薄膜与Ti底基之间的界面。研究中发现,二种薄膜电极的表面形成了CdO,SeO_2及TeO_2氧化物,与薄膜接触的Ti底基表面上形成了TiO_2。用俄歇电子能谱(AES)对在电极表面及Ti表面所生成的氧化层分别进行了深度分析。结果表明,各种氧化物形成的程度有很大的不同,氧化层厚度也存在差异。对影响薄膜电极的光电性能的因素进行了讨论。 X-ray photoelectron spectroscopy (XPS) was used to study the surface of CdSe and Cdse_xTe_ (1-x) electrode sintered at different oxygen containing atmospheres and the interface between the film and the Ti base. It was found that CdO, SeO 2 and TeO 2 oxides were formed on the surface of the two kinds of thin film electrodes, and TiO 2 formed on the surface of the Ti substrate in contact with the thin film. In-depth analysis of the oxide layers formed on the electrode surface and the Ti surface was performed by Auger electron spectroscopy (AES). The results show that the formation of various oxides have very different levels, there are also differences in oxide thickness. The factors that affect the photoelectric properties of the thin film electrode are discussed.