Interfacial microstructure and properties of diamond/Cu-xCr composites for electronic packaging appl

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Diamond/Cu-xCr composites were fabricated by pressure infiltration process.The thermal conductivities of diamond/Cu-xCr(x = 0.1,0.5,0.8) composites were above 650 W/mK,higher than that of diamond/Cu composites.The tensile strengths ranged from 186 to 225 MPa,and the bonding strengths ranged from 400 to 525 MPa.Influences of Cr element on the thermo-physical properties and interface structures were analyzed.The intermediate layer was confirmed as Cr3C2 and the amount of Cr3C2 increased with the increase of Cr concentration in Cu-xCr alloys.When the Cr concentration was up to 0.5 wt.%,the content of the Cr3C2 layer was constant.As the thickness of the Cr3C2 layer became larger,the composites showed a lower thermal conductivity but higher mechanical properties.The coefficients of thermal expansion(CTE) of diamond/Cu-xCr(x = 0.1,0.5,0.8) composites were in good agreement with the predictions of the Kerner’ model. Diamond / Cu-xCr composites were fabricated by pressure infiltration process. The thermal conductivities of diamond / Cu-xCr (x = 0.1,0.5,0.8) composites were above 650 W / mK, higher than that of diamond / Cu composites. strengths ranged from 186 to 225 MPa, and the bonding strengths ranged from 400 to 525 MPa. Influences of Cr element on the thermo-physical properties and interface structures were. The intermediate layer was confirmed as Cr3C2 and the amount of Cr3C2 increased with the increase of Cr concentration in Cu-xCr alloys. When the Cr concentration was up to 0.5 wt.%, the content of the Cr3C2 layer was constant. As the thickness of the Cr3C2 layer became larger, the composites showed a lower thermal conductivity but higher mechanical properties. These coefficients of thermal expansion (CTE) of diamond / Cu-xCr (x = 0.1,0.5,0.8) composites were in good agreement with the predictions of the Kerner ’model.
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