0.2μm T形栅制作技术在 10 0 mm Ga As激光驱动电路芯片研制中获得了成功的应用 .优化的栅制作工艺保证了形貌良好的栅线条 ,获得了优良的晶体管直流参数和高频性能 .栅工艺重复性好 ,整片内器件性能均匀一致 ,确保了电路的成功研制 .实际电路测试结果表明 ,在 10 0 mm Ga As片上制备的 PHEMT驱动电路的芯片测试合格率达到 70 %以上 ,可靠性良好 The 0.2μm T gate fabrication technology has been successfully applied in the development of 10 0 Ga Ga laser driver chips.The optimized gate fabrication ensures the well-formed gate lines with excellent transistor DC parameters and high frequency performance The repeatability of the gate process is good and the uniform performance of the devices in the whole chip ensures the successful development of the circuit.The actual circuit test results show that the chip test pass rate of the PHEMT driving circuit fabricated on a Ga 0 chip of 10 0 mm reaches more than 70% Good reliability