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A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator(SOI) substrate by deep ultraviolet lithography(DUV) and inductively coupled plasma(ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB.
The 455 45 channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma ) etching technologies. The 45-channel 100 GHz AWG exhibits an insertion loss of 6.5 dB and crosstalk of-8 dB.