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以常规 TEM为工具 ,研究了 Si CP/ ZL10 9复合材料中数十个 Si C颗粒及其界面 ,Si优先在 Si C表面上形核、长大 ,形成界面 Si,并形成大量 Si C/ Si界面。靠近 Si C界面的 Al基体中 ,普遍存在一层厚度小于 1μm的“亚晶铝带”,其内有大量位错。Si C与 Al、Si C与 Si之间虽然没有固定的晶体学位向关系 ,但是存在下列优先关系 :(110 3) Si C/ /(111) Al,[112 0 ]Si C/ / [110 ]Al;(110 1) Si C/ / (111) Si;[112 0 ]Si C/ / [112 ]Si
Dozens of Si C particles and their interfaces in Si CP / ZL109 composites were studied by conventional TEM. Si preferentially nucleated and grown on the surface of Si C, forming interfacial Si and forming a large amount of Si C / Si interface. In the Al matrix close to the Si C interface, there is a widespread “sub-crystalline aluminum ribbon” with a thickness of less than 1 μm with a large number of dislocations. Although there is no fixed relationship between the crystallographic orientations of Si C and Al, Si C and Si, the following preferential relations exist: (110 3) Si C / (111) Al, [112 0] Si C / [110] Al; (110 1) Si C / (111) Si; [112 0] Si C / [112] Si