【摘 要】
：
The Ⅲ-nitride semiconductor microdisk laser exhibits high quality factor and low excitation threshold with broad development potential in the field of nanophot
【机 构】
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School of Optoelectronic Science and Engineering,Soochow University,Suzhou 215006,China;Key Lab of A
论文部分内容阅读
The Ⅲ-nitride semiconductor microdisk laser exhibits high quality factor and low excitation threshold with broad development potential in the field of nanophotonics such as nanoscale light-emitting devices and on-chip optical integration.So far,many works have been focused on process synthesis and nanos-tructural design of microdisk lasers.Nevertheless,there are still some limitations in the existing optical resonance mode which is an important internal influence factor for lasing characteristics.In this work,a new double-triangular whispering-gallery mode (D3-WGM) lasing from a hexagonal GaN microdisk with a high quality (Q) factor of 3049 and an excitation threshold of around 11.5 μW has been experimen-tally demonstrated.In addition,the optical properties of hexagonal-WGM (6-WGM),triangular-WGM(3-WGM) and D3-WGM lasing from microdisk are explored by numerical calculation and Comsol sim-ulation.These results confirm that the D3-WGM lasing has its own significant performance advantages,namely high Q factor and easy light emission.Based on this novel laser mode characteristic,microcavity lasers are expected to be further developed and applied in the field of nanophotonics.
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