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在工业技术院大型计划超高性能电子计算机予定使用的144位MOS大规模集成电路随机存取存贮器研究的时候,以检查和改进从试制阶段到大量生产的制作技术为主要目的进行了可靠性试验。 本文的主要目的是报告可靠性试验的数据,同时描述可靠性试验中所采用的测量环形振荡器频率的方法和效果。 试验大体上可以分为三个阶段。从1位单元到144位大规模集成电路存贮器试验的第一阶段。在第二阶段里产生的大部份不良情况是与表面有关。最后第三阶段的样品,把防止衬底泄漏电流的p型扩散作了改进;作为SiO_2针孔的解决办法,加厚了栅氧化膜并改进表面保护;随着进一步减少操作中的灰尘,在设计上对原图进行了修改,把源和漏配置成梳状图形,以减小芯片面积,增大电流和工作容限。 由于以上改进,使寿命从第一阶段到第三阶段得到大约10~3的提高。
In the study of 144-bit MOS LSI intended for use by the large-scale ultra-high performance computer in the Institute of Industrial Technology, the main purpose was to examine and improve the production technology from the prototype stage to the mass production Sexual test. The main purpose of this paper is to report data on reliability tests and to describe the methods and effects of measuring ring oscillator frequencies used in reliability tests. The experiment can be divided into three stages. The first phase of testing from 1-bit cell to 144-bit LSI memory. Most of the side effects of the second phase are surface-related. Finally, the third phase of the sample, to prevent the substrate leakage current p-type diffusion has been improved; as a solution of SiO 2 pinhole, thickened gate oxide film and improve the surface protection; with further reducing the operation of the dust in the The original design has been modified to configure the source and drain comb-shaped graphics to reduce the chip area, increasing current and work tolerance. As a result of the above improvements, life expectancy has been increased by about 10 to 3 from the first phase to the third phase.