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尝试了Si基上生长GaN外延层的一种新的缓冲层材料 -阳极氧化铝。在Si(111)衬底上电子束蒸发铝膜 ,经阳极氧化后放入MOCVD系统中退火 ,然后进行GaN外延生长。对材料的微结构和电学性质进行了测量和分析 ,并将得到的GaN材料制备成光导型的紫外光电探测器 ,器件在 330～ 380nm紫外光区域有明显响应 ,最高响应度为 3.5A/W (5V偏压 )。
A new buffer layer material, anodic alumina, was grown on Si-based GaN epitaxial layer. Evaporation of the aluminum film on the Si (111) substrate by anodization followed by annealing in an MOCVD system followed by GaN epitaxial growth. The microstructure and electrical properties of the material were measured and analyzed, and the obtained GaN material was prepared as a photoconductive UV detector. The device had obvious response in the ultraviolet region of 330 ~ 380nm with the highest responsivity of 3.5A / W (5V bias).