Ni/Sn couples,prepared by sequentially electroplating Ni layers and Sn layers on metallized Si wafers,were employed to study the mierostructures and growth kinetics of Ni-Sn intermediate phases,when the Ni/Sn couples were aged at room temperature or annealed at temperatures from 150 to 225℃for various times.The results show that the NiSn phase and Ni_3Sn_4 phase are formed,respectively,in the aged couples and annealed couples.The Ni_3Sn_4 layer is continuously distributed between the Ni and Sn sides in the annealed Ni/Sn couples. The Ni_3Sn_4 growth follows parabolic growth kinetics with an apparent activation energy of 39.0 kJ/mol. Ni / Sn couples, prepared by sequentially electroplating Ni layers and Sn layers on metallized Si wafers, were employed to study the mierostructures and growth kinetics of Ni-Sn intermediate phases, when the Ni / Sn couples were aged at room temperature or annealed at temperatures from 150 to 225 ° C for various times. The results show that the NiSn phase and Ni_3Sn_4 phases are formed, respectively, in the aged couples and annealed couples. The Ni_3Sn_4 layer is continuously distributed between the Ni and Sn sides in the annealed Ni / Sn couples. The Ni_3Sn_4 growth follows parabolic growth kinetics with an apparent activation energy of 39.0 kJ / mol.