离子注入制程已成为器件设计的最前端工作,现在更被视为实现32nm和22nm晶体管制程的推动要素。器件漏电流、浅结面制作,器件尺寸缩小,以及急速增加成本的挑战,正在限制摩尔定律的延伸。针对32nm节点离子注入制程器件的工艺要求,介绍了离子注入设备的发展方向。 Ion implantation process has become the forefront of device design, and now is more to be considered as the driving factor to achieve 32nm and 22nm transistor process. Device leakage current, shallow junction fabrication, reduced device size, and the challenge of rapidly increasing cost are limiting the extension of Moore’s Law. According to the process requirements of 32nm node ion implantation process device, the development of ion implantation equipment is introduced.