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以MOCVD系统生长Zn1-xMgxO合金,通过改变Mg、Zn气相比调制得到了不同组分含量的Zn1-xMgxO合金,其中Mg的固态含量从0变化到0.49,其对应的禁带宽度从3.31eV覆盖到5.02eV。以所生长的Zn1-xMgxO/蓝宝石为衬底,制备MSM结构的紫外探测器,在特定的偏压下,Ti/ZnO基紫外探测器在380nm具有最高响应度0.14A/W,Ni/Mg0.36Zn0.64O基深紫外探测器在327nm具有最高响应度1.9×10-4A/W,并且其在紫外波长的峰值响应度均比可见光450nm处的响应度高出两个数量级。
Zn1-xMgxO alloys were grown by MOCVD system and Zn1-xMgxO alloys with different compositions were prepared by changing the gas phase ratio of Mg and Zn. The solid content of Mg varied from 0 to 0.49, and the corresponding band gap was covered from 3.31eV To 5.02eV. Based on the grown Zn1-xMgxO / sapphire substrate, a UV detector with MSM structure was fabricated. The Ti / ZnO-based UV detector had the highest responsivity of 0.14A / W and Ni / Mg0 at 380nm under specific bias voltage. 36Zn0.64O-based deep UV detector has the highest responsivity of 1.9 × 10-4 A / W at 327nm and its peak responsivity at ultraviolet wavelength is two orders of magnitude higher than the responsivity at visible light of 450nm.