在诸如Micron、Toshiba、STMicroelectronics、Intel、Chartered Semiconductor以及TSMC等众多制造商中,使用穿透硅通孔(through-silicon via)的3D集成技术已经呼之欲出。本文的第一部分“3D集成电路将如何实现?”(《半导体国际》2009年3月刊)中,综述了用于制造3D叠层器件的众多可选方案。第二部分将探究那些正在进行3D穿透硅通孔(TSV)技术商业化的公司。首次应用传统的器件按比例缩减将在未来10-15年之内到达其自身物理极限,而在这段时间内, In many manufacturers such as Micron, Toshiba, STMicroelectronics, Intel, Chartered Semiconductor, and TSMC, 3D integration technology using through-silicon vias has emerged. In the first part of this article, “How 3D Integrated Circuits Will Work?” (Semiconductor International, March 2009) reviewed a number of options for fabricating 3D stacked devices. The second part explores companies that are commercializing 3D-through-silicon-vias (TSVs). For the first time, the traditional scaling down of devices will reach its own physical limits in the next 10-15 years, and during this time,