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利用固相反应法制备Pr0.5Ca0.5MnO3(PCMO)靶材,并采用脉冲激光沉积法(PLD)在n型Si(111)基片上沉积PCMO外延薄膜,研究了薄膜的输运特性及薄膜与Si衬底形成异质结的整流特性.结果表明:在80—300K温度范围内,PCMO薄膜的阻温关系符合变程跳跃模型,随着温度的升高表现出从一维到二维再到三维的转变,分析认为可能源于轨道自由度对电子输运特性的影响.PCMO/Si异质结在磁场作用下整流特性得到改善,且在正向电流方向出现从正磁电阻到负磁电阻的过渡.
Pr0.5Ca0.5MnO3 (PCMO) targets were prepared by solid-state reaction and PCMO epitaxial films were deposited on n-type Si (111) substrates by pulsed laser deposition (PLD) Si substrate.The results show that in the temperature range of 80-300K, the resistance temperature dependence of PCMO films accords with the stochastic jump model, and from the one dimensional to the two dimensional Three-dimensional changes, the analysis that may be derived from the trajectory degrees of freedom on the electron transport properties.PCMO / Si heterojunctions in the magnetic field under the rectification characteristics have improved, and in the forward current direction from the positive magnetic resistance to negative magnetic resistance Transition.