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引言 在双极型半导体集成电路和MOS集成电路中,CVD多晶硅膜广泛用作隔离、互连引线、硅栅、钝化等工艺,近年来采用双层多晶硅工艺的16k以上RAM及BoMos (1)（掩埋氧化物MOS）中的源、漏区、则代表了多晶硅在LSI中新的应用。特别是用作互连引线及双层多晶硅中的多晶硅,必须进行多晶硅氧化,以提供电绝缘,就要求多晶硅氧化层是一层可靠的、电导率低的绝缘材料通常,用作硅栅的多晶硅膜在700℃左右温度下淀积,我们把它称作低温多晶硅。而应用于BoMoS中作源、漏的多晶硅膜是在高
Introduction In bipolar semiconductor integrated circuits and MOS integrated circuits, CVD polycrystalline silicon films are widely used as isolation, interconnection leads, silicon gate, passivation and other processes. In recent years, 16K RAM and BoMos (1) (Buried oxide MOS) in the source and drain regions, it represents the new polysilicon in LSI applications. Particularly for use as polysilicon in interconnection leads and bilayer polysilicon, polycrystalline silicon must be oxidized to provide electrical insulation, which requires the polysilicon oxide to be a reliable, low-conductivity insulating material. Conventionally, polysilicon used as a silicon gate The film is deposited at a temperature of about 700 ° C and we call it low temperature polysilicon. The polysilicon film used as a source and drain in BoMoS is high