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多晶硅片受到自身缺陷的限制,转换效率明显低于单晶硅片。为了提高多晶硅片转换效率,通过改造多晶铸锭炉热场结构,调整相关工艺参数,改变传统晶体生长方向,控制整个晶体生长过程,实现凸形固液界面,增大单晶晶粒尺寸,减少单张硅片中杂质对少子寿命的影响,以提高转换效率,同时可降低能耗,最终实现进一步降低成本的目的。
Polycrystalline silicon by its own limitations, the conversion efficiency was significantly lower than that of monocrystalline silicon. In order to improve the conversion efficiency of polycrystalline silicon wafers, the thermal field structure of polycrystalline ingot furnace was modified, the relevant process parameters were adjusted, the growth direction of traditional crystal was changed, the whole crystal growth process was controlled, the convex solid-liquid interface was formed, the single crystal grain size was increased, Reduce the impact of impurities in a single wafer on the life of a few children in order to improve the conversion efficiency, while reducing energy consumption, and ultimately achieve the purpose of further reducing costs.