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选择刻蚀在GaAs工艺中是非常重要的一步。由于湿法腐蚀存在钻蚀和选择性差,且精度难以控制，因此有必要进行干法刻蚀的研究。虽然采用反应离子刻蚀（RIE）、磁增强反应离子刻蚀（MERIE）可以进行选择刻蚀，但是这两种方法在挖槽时会对器件造成较大损伤，影响器件性能。感应耦合等离子刻蚀（ICP）是一种低损伤、高刻蚀速率高选择比的刻蚀方法,在GaAs器件的制造中有突出的优点。本工作进行了GaAs/AlGaAs的选择刻蚀研究，GaAs/AlGaAs的选择比达到840:1,取得较理想的刻蚀结果。
The choice of etching is a very important step in the GaAs process. Because of the existence of wet etching corrosion and poor selectivity and poor accuracy of control, it is necessary for dry etching research. Although reactive etching (RIE) and magnetically enhanced reactive ion etching (MERIE) can be used for selective etching, both of these methods cause significant damage to the device when grooving and affect device performance. Inductively Coupled Plasma Etch (ICP) is a low-damage, high-etch-rate, high-selectivity etch that has outstanding advantages in the fabrication of GaAs devices. In this work, the selective etching of GaAs / AlGaAs was studied, the selectivity ratio of GaAs / AlGaAs was 840: 1, and the ideal etching result was obtained.