论文部分内容阅读
The great deal of novel rare earth based semiconducting lanthanum barium copper oxide La_3Ba_3Cu_6O_(14)(LBC-336) were synthesized by low temperature molten salt synthesis(MSS) due to “dissolution precipitation mechanism”.Here,we reported one pot synthesis of product by direct precipitation from a molten KOH-NaOH mixture at 450 ℃ and single phase La_3Ba_3Cu_6O_(14) with tetragonal crystal system.The particle size of 140-200 nm were observed in both PXRD pattern and HRSEM micrographs and it showed a cubic morphology.The semiconducting nature was extracted from various parameters like optical band gap(1.8 eV),AC conductivity(0.70 eV),DC conductivity(0.70 eV),and also Hall effect parameters like the charge carrier concentration values n=6.0×10~(26) m~(-3) and it proved as a p-type semiconductor.The electrical phase trasition temperature from ferroelectric to antiferroelectric system(T_m=420 K) and anti-ferroelectric- paraelectric system(depolarization temperature T_d=673 K) which attributed to the space charge polarization contributed to the conduction mechanism.The magnetic phase transitions were from ferromagnetic to ferrimagnetic system(Curie temperature(T_c=70 K)) and it led to soft magnetic material and also held good for superconductor application upto 70 K.
The great deal of novel rare earth based semiconducting lanthanum barium copper oxide La_3Ba_3Cu_6O_ (14) (LBC-336) was synthesized by low temperature molten salt synthesis (MSS) due to “dissolution precipitation mechanism ”. Here, we reported one pot synthesis of product by direct precipitation from a molten KOH-NaOH mixture at 450 ° C and single phase La_3Ba_3Cu_6O_ (14) with tetragonal crystal system. Particle size of 140-200 nm were observed in both PXRD pattern and HRSEM micrographs and it showed a cubic morphology The semiconducting nature was extracted from various parameters like optical band gap (1.8 eV), AC conductivity (0.70 eV), DC conductivity (0.70 eV), and also Hall effect parameters like the charge carrier concentration values n = 6.0 × 10 ~ 26) m ~ (-3) and it proved as a p-type semiconductor. The electrical phase trasition temperature from ferroelectric to antiferroelectric system (T_m = 420 K) and anti-ferroelectric- paraelectric system (depolarization temperature T_d = 673 K) which att ributed to the space charge polarization contributed to the conduction mechanism. The magnetic phase transitions were from ferromagnetic to ferrimagnetic system (Curie temperature (T_c = 70 K)) and it led to soft magnetic material and also held good for superconductor application up to 70 K.